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FQA13N80-F109中文资料

厂家型号

FQA13N80-F109

文件大小

1151.05Kbytes

页面数量

8

功能描述

12.6 A, 800 V, RDS(on) = 750 m廓 (Max.) @ VGS = 10 VID = 6.8 A

12.6 A, 800 V, RDS(on) = 750 m??(Max.) @ VGS = 10 VID = 6.8 A

数据手册

下载地址一下载地址二到原厂下载

生产厂商

FAIRCHILD

FQA13N80-F109数据手册规格书PDF详情

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

• 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V ID = 6.8 A

• Low Gate Charge (Typ. 68 nC)

• Low Crss (Typ. 30 pF)

• 100 Avalanche Tested

FQA13N80-F109产品属性

  • 类型

    描述

  • 型号

    FQA13N80-F109

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    12.6 A, 800 V, RDS(on) = 750 m??(Max.) @ VGS = 10 VID = 6.8 A

更新时间:2026-2-27 10:31:00
供应商 型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
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ONSEMI
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ON/安森美
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SMD
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onsemi
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三年内
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