4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121, and FODM2701 series consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 series consists of two gallium arsenide infrared emitting diodes connected in invers

4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121, and FODM2701 series consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 series consists of two gallium arsenide infrared emitting diodes connected in invers

4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121, and FODM2701 series consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 series consists of two gallium arsenide infrared emitting diodes connected in invers

4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121 series, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse para

FODM121 Series, FODM124, FODM2701 Series, FODM2705 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

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Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board