4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

4-Pin DIP Phototransistor Optocouplers

Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory

4-Pin DIP Phototransistor Optocouplers

文件：534.11 Kbytes Page：12 Pages

4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

4-Pin DIP Phototransistor Optocouplers

Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory

4-Pin DIP Phototransistor Optocouplers

文件：534.11 Kbytes Page：12 Pages

817 photocoupler consist of one piece of GaAs emitter and one piece of NPN transistor

Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V) Insulation Voltage = 5,000Vrms Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA, RL=100 Ω) UL approved: UL1577, file No. E492440

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