4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

4-Pin DIP Phototransistor Optocouplers

Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory

4-Pin DIP Phototransistor Optocouplers

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817 photocoupler consist of one piece of GaAs emitter and one piece of NPN transistor

Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V) Insulation Voltage = 5,000Vrms Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA, RL=100 Ω) UL approved: UL1577, file No. E492440

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