N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications:- • d.c. to d.c. converters • switche

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

OptiMOS짰2 Power-Transistor

文件：265.97 Kbytes Page：9 Pages

OptiMOS짰2 Power-Transistor

文件：308.4 Kbytes Page：10 Pages

OptiMOS짰2 Power-Transistor

文件：308.4 Kbytes Page：10 Pages