位置：首页 > IC中文资料 > FMY50N30ES
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
300V, 50A PDP IGBT General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | ||
300V, 50A PDP IGBT General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-Channel Power MOSFET 文件：352.19 Kbytes Page：7 Pages | NELLSEMI 尼尔半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：253.23 Kbytes Page：4 Pages | DACO | | ||
isc N-Channel MOSFET Transistor 文件：380.61 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
12388 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
2023+ |
TO220F |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
FAIRCHILD/仙童 |
25+ |
TO220 |
2774 |
原装正品,假一罚十! |
|||
FAIRCHILD/仙童 |
24+ |
TO220F |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD |
25+23+ |
TO220F |
37580 |
绝对原装正品全新进口深圳现货 |
|||
Fairchild |
24+ |
TO-220F |
174 |
||||
FAIRCHILD/仙童 |
24+ |
TO220F |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD/仙童 |
2447 |
TO220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD/仙童 |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
|||
FAIRCHILD/仙童 |
21+ |
TO220F |
1709 |
FMY50N30ES规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-13
DdatasheetPDF页码索引
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