rN-Channel enhancement mode power MOSFET

Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply

isc N-Channel MOSFET Transistor

• DESCRITION • UPS (Uninterruptible Power Supply) • Power conditioner system • Power supply • FEATURES • Low on-resistance: RDS(on) ≤ 0.19Ω (max) • Low switching loss • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

功率MOSFET 600V-700V

功率MOSFET 600V-700V

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

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N-Channel 650-V (D-S) Super Junction MOSFET

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20A 600V N-channel enhanced field effect transistor

文件：833.85 Kbytes Page：6 Pages