SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

Features • BVCEO > -12V • IC = -1.25A Continuous Collector Current • ICM = -4A Peak Pulse Current • Low Saturation Voltage VCE(sat)

PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A

Medium Power Transistor

Features ● Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A.

12V PNP HIGH GAIN MEDIUM POWER TRANSISTOR IN SOT23

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PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 12V 1.25A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 12V 1.25A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

717 Series Pressfit Card Edge Connector | Black | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator

Features UL Certified .156 (3.96mm) Contact spacing x .200 (5.08mm) row spacing Accepts .062 (1.57mm) nominal thickness P.C. board Low profile insulator body, .550(13.97mm) high Contact termination options include P.C. tail, and .025 (0.64mm) square wire wrap Press-Fit compliant section fo

717 Series Pressfit Card Edge Connector | Black | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator

Features UL Certified .156 (3.96mm) Contact spacing x .200 (5.08mm) row spacing Accepts .062 (1.57mm) nominal thickness P.C. board Low profile insulator body, .550(13.97mm) high Contact termination options include P.C. tail, and .025 (0.64mm) square wire wrap Press-Fit compliant section fo

The 717 & 719 series filters provide superior wideband filtering for Wye or Delta power configurations.

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Motor terminal boards similar to DIN 46294

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One-Piece Surface Steel Raceway

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