PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 77mΩ at 3A

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

Features • BVCEO = -12V • IC = -3.0A Continuous Current • Low Saturation Voltage VCE(sat)

PNP Silicon Power Switching Transistor

Features ● 2W power dissipation. ● 10A peak pulse current. ● Excellent HFE characteristics up to 10 Amps. ● Extremely low saturation voltage E.g. 12mv Typ. ● Extremely low equivalent on-resistance. RCE(sat) 77mΩ at 3A.

PNP, 12V, 3A, SOT89

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

Features • BVCEO = -12V • IC = -3.0A Continuous Current • Low Saturation Voltage VCE(sat)

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

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封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 12V 3A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Feat

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PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 500mW POWER DISSIPATION * IC CONT 1.5A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Negative boost functions in DC-DC converters * Supply line switc