PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

文件：75.18 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 12V 1.25A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 77mΩ at 3A

Common Anode Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Feat

DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 500mW POWER DISSIPATION * IC CONT 1.5A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Negative boost functions in DC-DC converters * Supply line switc