Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

Very fast high-voltage soft-recovery rectifiers

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CMOS 低压差线性稳压器(LDO)

BY7172 是一款 CMOS 低压差线性稳压器(LDO) ， 工作电压范围为 2.3V至 6.5V ， 可提供高达 2A 的输出电流。 这款高输出电流 LDO 非常适合对采用6V 到低至 1.2V 电源轨工作的高性能模拟和混合信号电路实施稳压。该器件可提供高电源抑制比和低噪声， 利用一个 4.7µF 小陶瓷输出电容器即可实现卓越的电压和负载瞬态响应。 对于 1mA 至 1.5A 负载阶跃， 负载瞬态响应通常为 1.5μs。 输出噪声最低为 6μVrms， 通过软启动引脚调整启动时间， 可以控制浪涌电流。 使用 1nF 软启动电容器时的典型启动时间为1.0ms。 • 输入电压范围(V)： 2.3~ 18\r\n• 输出电流范围(A)： ≤2\r\n• 纹波抑制(dB)： 60\r\n• 快速瞬态调整(us)： <1.5;

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 77mΩ at 3A

Common Anode Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Feat

DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 500mW POWER DISSIPATION * IC CONT 1.5A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Negative boost functions in DC-DC converters * Supply line switc