isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

功率MOSFET 600V-700V

N-CHANNEL SILICON POWER MOSFET

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Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

•75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh

POWER FIELD EFFECT TRANSISTOR

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Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages