isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-CHANNEL SILICON POWER MOSFET

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功率MOSFET 600V-700V

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT)

Features 600V, 5A, Low VCE(sat) Trench-Gate Field-Stop technology Optimized for conduction Robust RoHS compliant* Applications Switch-Mode Power Supplies (SMPS) Uninterruptible Power Sources (UPS) Power Factor Correction (PFC)

N-Channel 650 V (D-S) MOSFET

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N -Channel P ower MOSFET

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N-Channel Power MOSFET

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N-Channel Power MOSFET

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