Glass passivated type

Glass passivated type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage curr

Micro Soldering Iron kit

Features • Connects to FX951, FM203 & FM206 stations • Compatible with T30 series micro tips • Temperature range 200°- 450°C • Light weight handle with cool running grip • Burn resistant cord • ESD safe

General Purpose Rectifiers

SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes)

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Chip General Purpose Rectifiers

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Heavy Duty Soldering Iron and Tips

Product Description: Hakko FM-2030 Heavy Duty Soldering Iron and Tips

Heavy Duty Soldering Iron and Tips

Product Description: Hakko FM-2030 Heavy Duty Soldering Iron and Tips

Heavy Duty Soldering Iron and Tips

Product Description: Hakko FM-2030 Heavy Duty Soldering Iron and Tips

Micro Soldering Iron kit

Features • Connects to FX951, FM203 & FM206 stations • Compatible with T30 series micro tips • Temperature range 200°- 450°C • Light weight handle with cool running grip • Burn resistant cord • ESD safe

Micro Soldering Iron kit

Features • Connects to FX951, FM203 & FM206 stations • Compatible with T30 series micro tips • Temperature range 200°- 450°C • Light weight handle with cool running grip • Burn resistant cord • ESD safe

Micro Soldering Iron kit

Features • Connects to FX951, FM203 & FM206 stations • Compatible with T30 series micro tips • Temperature range 200°- 450°C • Light weight handle with cool running grip • Burn resistant cord • ESD safe

Chip Silicon Rectifier - Glass passivated type

Glass passivated type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage curr

General Purpose Rectifiers

General Purpose Rectifiers

Chip General Purpose Rectifiers

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SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes

文件：30.41 Kbytes Page：3 Pages

SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Ampere

文件：360.39 Kbytes Page：4 Pages

Chip General Purpose Rectifiers

文件：59.14 Kbytes Page：7 Pages

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.