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FM203-L

Chip Silicon Rectifier - Glass passivated type

Glass passivated type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage curr

FORMOSA

美丽微半导体

FM203-L

Chip General Purpose Rectifiers

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FORMOSA

美丽微半导体

FM203-L

General Purpose

FORMOSA

美丽微半导体

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

PHILIPS

飞利浦

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

PHILIPS

飞利浦

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

POLYFET

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

MOSPEC

统懋

FM203-L产品属性

  • 类型

    描述

  • VRRM(V):

    200

  • IO(A):

    2

  • IFSM(A):

    50

  • VF(V) Max.:

    1.1

  • IF(A):

    2

  • IR(μA) Max:

    5

  • VR(V):

    200

FM203-L数据表相关新闻

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    FM22L16-55-TG XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG225I XC7Z030-1FBG676C CY7C1069AV33-10ZXC XC6SLX16-2C

    2021-6-4
  • FM18W08-SG

    FM18W08-SG XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG225I XC7Z030-1FBG676C CY7C1069AV33-10ZXC XC6SLX16-2CSG2

    2021-6-2
  • FM16W08

    FM16W08 XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG225I XC7Z030-1

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    FM1288-GA1-410产品规格参数

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  • FM24C03UFLEM8,FM24C03UFLZEM8,FM24C03UFLZEMT8,FM24C03UFLZMT8X,FM24C03UFM8,FM24C03ULEM8,FM24C03ULM8,FM24C03ULMT8,FM24C03ULN,FM24C03ULVM8,FM24C03ULZMT8,FM24C03ULZMT8X,FM24C03UVM

    FM24C03UFLEM8,FM24C03UFLZEM8,FM24C03UFLZEMT8,FM24C03UFLZMT8X,FM24C03UFM8,FM24C03ULEM8,FM24C03ULM8,FM24C03ULMT8,FM24C03ULN,FM24C03ULVM8,FM24C03ULZMT8,FM24C03ULZMT8X,FM24C03UVM

    2019-12-18