型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

IRF

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

IRF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

IRF

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

更新时间:2025-12-29 13:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon/英飞凌
21+
TO220
6820
只做原装,质量保证
IR
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
IR
25+
WDFN8
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
Infineon/英飞凌
24+
TO220
25000
原装正品,假一赔十!
IR墨西哥
16+17+
TO-220
4178
只做原装正品
Infineon/英飞凌
24+
TO220
6000
全新原装深圳仓库现货有单必成
IR
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应

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