| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER MOSFET Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF |   | ||
P-CHANNEL POWER MOSFETs FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability | Samsung 三星 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：277.52 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：280.77 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR/VISHAY |
25+ |
TO-220 |
45000 |
IR/VISHAY全新现货IRF9Z24NPBF即刻询购立享优惠#长期有排单订 |
|||
IR |
24+ |
TO-220 |
55608 |
保证进口原装现货假一赔十 |
|||
IR |
2025+ |
TO-220 |
5000 |
原装进口价格优 请找坤融电子! |
|||
INFINEON |
2136 |
TO-220 |
45400 |
全新原装公司现货
|
|||
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,现货供应IRF9Z24N,欢迎咨询洽谈。 |
|||
INFINEON |
23+ |
TO-220 |
30000 |
正规渠道,只有原装! |
|||
IR |
23+ |
TO-220 |
65400 |
||||
IR |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY/威世 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
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DdatasheetPDF页码索引
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