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P-CHANNEL POWER MOSFETs

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability

Samsung

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VishayVishay Siliconix

威世威世科技公司

POWER MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

IRF

isc N-Channel MOSFET Transistor

文件:280.77 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:277.52 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

更新时间:2025-12-29 8:10:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO 220
160878
明嘉莱只做原装正品现货
INFINEON
24+
Tube
75000
郑重承诺只做原装进口现货
INFINEON
20+
TO-220
50000
IR
1442+
D2-PAK
16515
INFINEON
100000
代理渠道/只做原装/可含税
IR
24+
TO-220
55608
保证进口原装现货假一赔十
VISHAY/威世
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
IR(国际整流器)
24+
N/A
73048
原厂可订货,技术支持,直接渠道。可签保供合同
IR
24+
TO-220
18355
原装现货假一赔十
VISHAY(威世)
24+
TO-263-3
7828
支持大陆交货,美金交易。原装现货库存。

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