Electrical Characteristics of the IGBT

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i

Electrical Characteristics of the IGBT

Electrical Characteristics of the IGBT

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i

IGBT

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance A

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance

1500V MOS Gated Thyristor

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