General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance A

General Description

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance

封装/外壳：TO-264-3，TO-264AA 包装：管件 描述：IGBT 1500V 40A 200W TO264 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-264-3，TO-264AA 包装：管件 描述：IGBT 1500V 40A 200W TO264 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Electrical Characteristics of the IGBT

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i

Electrical Characteristics of the IGBT

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A • High i

1500V MOS Gated Thyristor

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