型号 功能描述 生产厂家 企业 LOGO 操作
FGHL40T65MQD

Field Stop Trench IGBT 650 V, 40 A

Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.)

ONSEMI

安森美半导体

FGHL40T65MQD

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IGBT 650V 40A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

FGHL40T65MQD

IGBT - 650 V 40 A FS4 medium switching speed IGBT

ONSEMI

安森美半导体

Field Stop Trench IGBT 650 V, 40 A

Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC =

ONSEMI

安森美半导体

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:FS4 MID SPEED IGBT 650V 40A TO24 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode

ONSEMI

安森美半导体

IGBT for Automotive Applications 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

ONSEMI

安森美半导体

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

ONSEMI

安森美半导体

IGBT for Automotive Application 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

ONSEMI

安森美半导体

650V Field Stop IGBT

文件:1.88982 Mbytes Page:8 Pages

MGCHIP

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件:271.44 Kbytes Page:9 Pages

ONSEMI

安森美半导体

更新时间:2026-1-4 18:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
TO247
30000
ON一级代理商 原装进口现货
ON
24+
TO-247-3LD
25000
ON全系列可订货
onsemi(安森美)
24+
TO-247
928
原厂订货渠道,支持BOM配单一站式服务
ON支持实单
22+
TO-247-3
9000
22+
ONN
2526+
原厂封装
262
只做原装优势现货库存 渠道可追溯
ON
25+
TO-247
2250
原厂原装,价格优势
ON(安森美)
2447
TO-247-3
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON(安森美)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
onsemi
25+
TO-247-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ON
24+
NA
3000
进口原装 假一罚十 现货

FGHL40T65MQD数据表相关新闻