Field Stop Trench IGBT 650 V, 40 A

Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC =

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FS4 MID SPEED IGBT 650V 40A TO24 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT for Automotive Applications 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

IGBT for Automotive Application 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

650V Field Stop IGBT

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IGBT for Automotive Applications, 650 V, 40 A, D2PAK

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