600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage:

IGBT，600V，场截止

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为感应加热、通讯、ESS 和 PFC 等低导通损耗和开关损耗至关重要的应用提供了最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =1.8V @ IC = 40A\n•高输入阻抗\n•快速开关\n•符合 RoHS 标准;

IGBT，600V，场截止

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为感应加热和功率因数校正(PFC)等低导通损耗和开关损耗至关重要的应用提供了最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =1.8V @ IC = 40A\n•高输入阻抗\n•快速开关\n•符合 RoHS 标准;

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Coltage: VCE(sat) = 1.8

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Coltage: VCE(sat) = 1.8

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage:

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 600V 80A 290W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 80A 290W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

Ultrafast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

High Current IGBT

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Ultra-Fast IGBT

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Ultra-Fast IGBT

文件：557.86 Kbytes Page：7 Pages