Ultra-Fast IGBT

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Ultra-Fast IGBT

Ultrafast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

Ultrafast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 600V 80A 195W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 600V 80A 195W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage:

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage:

HiPerFAST IGBT

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High Current IGBT

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