Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

分立式、高性能IGBT

封装/外壳：TO-3P-3 整包 包装：管件 描述：IGBT 600V 80A 110W TO3PF 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage:

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage:

HiPerFAST IGBT

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High Current IGBT

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