IGBT - Field Stop, Trench 1200 V, 40 A

文件：524.9 Kbytes Page：10 Pages

IGBT，1200V，40A，场截止沟槽

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 80A 555W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT - Field Stop, Trench 1200 V, 40 A

文件：524.9 Kbytes Page：10 Pages

IGBT - FS, Trench 1200 V, 40 A

文件：592.5 Kbytes Page：10 Pages

封装/外壳：TO-247-4 包装：管件 描述：IGBT TRENCH/FS 1200V 80A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT，1200V，25A，FS 沟槽

IGBT，超场截止

IGBT - Ultra Field Stop

文件：476.99 Kbytes Page：11 Pages

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.45 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topology in automotive applications. Features

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench

1200V, 40A, Irrm=12.3A IGBT MOSFET

DESCRIPTION The AM40T120 is available in TO-247 Package FEATURES ⚫ Fast Switching ⚫ Low VCE(sat): 2.1V ⚫ Positive Temperature Coefficient ⚫ Very Soft, Fast Recovery Anti-Parallel Diode ⚫ Irrm: 12.3A APPLICATION ⚫ UPS ⚫ Welding Converters ⚫ Converters With High Switching Frequency