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FGH20N60UFD价格
参考价格：￥10.0833
型号：FGH20N60UFDTU 品牌：FAIRCHILD 备注：这里有FGH20N60UFD多少钱，2026年最近7天走势，今日出价，今日竞价，FGH20N60UFD批发/采购报价，FGH20N60UFD行情走势销售排行榜，FGH20N60UFD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGH20N60UFD | 600V, 20A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS,welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE( | FAIRCHILD 仙童半导体 |   | |
FGH20N60UFD | IGBT，600V，20A，场截止 | ONSEMI 安森美半导体 | | |
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FAIRCHILD 仙童半导体 | | ||
600 V, 20 A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS,welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE( | FAIRCHILD 仙童半导体 | | ||
600V, 20A Field Stop IGBT 文件：1.07906 Mbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
600 V, 20 A Field Stop IGBT 文件：282.25 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 40A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching charac teristics and results in efficie | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara | MOTOROLA 摩托罗拉 | | ||
Short Circuit Rated IGBT 文件：628.02 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
Short Circuit Rated IGBT 文件：540.1 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | |
FGH20N60UFD产品属性
- 类型
描述
- 型号
FGH20N60UFD
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V, 20A Field Stop IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi(安森美) |
25+ |
TO-247-3 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
TO-247 |
56 |
原装正品,假一罚十! |
|||
ONSEMI/安森美 |
25+ |
TO-247 |
32360 |
ONSEMI/安森美全新特价FGH20N60UFD即刻询购立享优惠#长期有货 |
|||
FAIRCHILD |
1044+ |
TO247 |
2067 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHI |
23+ |
TO-247 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
FSC/ON |
25+ |
TO247 |
30000 |
代理全新原装现货,价格优势 |
|||
FAIRCHI |
25+ |
TO-247 |
15 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Fairchild/ON |
22+ |
TO247 |
9000 |
原厂渠道,现货配单 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
FGH20N60UFD规格书下载地址
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DdatasheetPDF页码索引
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