600V, 20A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS,welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(

IGBT，600V，20A，场截止

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600 V, 20 A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS,welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(

600V, 20A Field Stop IGBT

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600 V, 20 A Field Stop IGBT

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封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 40A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

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N-Channel 650-V (D-S) Super Junction MOSFET

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20A 600V N-channel enhanced field effect transistor

文件：833.85 Kbytes Page：6 Pages