丝印代码：FGA6560WDF；650 V, 60 A Field Stop Trench IGBT

Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 60 A • 100 of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • RoHS Compl

IGBT，650V，60A，场截止沟槽

Fairchild 的场截止第 3代 IGBT 新系列采用的是创新的场截止 IGBT 技术，为低导通和开关损耗的焊接机应用提供最优性能。 •最大结温： TJ=175°C\n•正温度系数，易于并联运行\n•高电流能力\n•低饱和电压： VCE(sat) =1.8 V（典型值） （IC= 60 A）\n•部件 100% 经过 ILM\n 检测\n•高输入阻抗\n•快速开关\n•符合 RoHS 标准;

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT TRENCH/FS 650V 120A TO3PN 分立半导体产品 晶体管 - UGBT、MOSFET - 单

POWER FACTOR CORRECTOR

DESCRIPTION The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. Realized in mixed BCD technology, the

POWER FACTOR CORRECTOR

DESCRIPTION The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. Realized in mixed BCD technology, the

POWER FACTOR CORRECTOR

DESCRIPTION The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. Realized in mixed BCD technology, the

NPN (AUDIO TRANSISTOR)

AUDIO TRANSISTOR • Collector-Emitter Voltage: VCEO = 25V • Collector Dissipation: pc(max)=625mW

Audio Transistor

Audio Transistor NPN Silicon