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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FGA180N33ATTU | 330V, 180A PDP Trench IGBT General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
FGA180N33ATTU | 封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR） 描述：IGBT 330V 180A 390W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
330V, 180A PDP Trench IGBT General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
330V, 180A PDP Trench IGBT General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
330V, 180A PDP Trench IGBT General Description Using novel trench IGBT Technology, Fairchild®’s new series of trench IGBTs offer the optimum performance for PDP TV applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.68 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
330 V PDP Trench IGBT 文件：655.99 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
330 V PDP Trench IGBT 文件：655.99 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
FGA180N33ATTU产品属性
- 类型
描述
- 型号
FGA180N33ATTU
- 功能描述
IGBT 晶体管 330V 180A PDP Trench
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
FSC |
1844+ |
TO3P |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FSC |
21+ |
TO-3P |
3820 |
原装现货假一赔十 |
|||
FAIRCHILD/仙童 |
2223+ |
TO-3P |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
Fairchild仙童 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
|||
onsemi(安森美) |
24+ |
TO-3P |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
86 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Fairchild |
24+ |
TO-3P |
277 |
||||
FAIRCHILD/仙童 |
2023+ |
TO-3P |
1632 |
十五年行业诚信经营,专注全新正品 |
FGA180N33ATTU芯片相关品牌
FGA180N33ATTU规格书下载地址
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DdatasheetPDF页码索引
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