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FGA15N120价格

参考价格:¥12.2245

型号:FGA15N120ANTDTU_F109 品牌:Fairchild 备注:这里有FGA15N120多少钱,2026年最近7天走势,今日出价,今日竞价,FGA15N120批发/采购报价,FGA15N120行情走势销售排行榜,FGA15N120报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:FGA15N120ANTDTU;1200 V, 15 A NPT Trench IGBT

文件:907.45 Kbytes Page:9 Pages

ONSEMI

安森美半导体

High speed switching

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

FAIRCHILD

仙童半导体

IGBT

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

FAIRCHILD

仙童半导体

High speed switching

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

FAIRCHILD

仙童半导体

1200V NPT Trench IGBT

Description Using Fairchilds proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as i

FAIRCHILD

仙童半导体

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC=15A · Extremely Enhanced Avalanche Capability · Positive Temperature Coefficient APPLICATIONS · Resonant or Soft Switching Application

ISC

无锡固电

IGBT,1200V,15A,NPT 沟槽

采用飞兆专有的沟道设计和先进NPT技术,此1200V NPT IGBT提供出色的导通和开关性能、高雪崩耐用性,易于并行运行。该设备非常适合谐振或软开关应用,例如感应加热、微波炉等。 •NPT 沟道技术,正温度系数\n•低饱和电压:VCE(sat)(典型值) = 1.9V@ IC = 15A 且 TC = 25°C\n•低开关损耗:EOFF(典型值) = 0.6mJ(IC = 15A 且 TC = 25°C时)\n•极度增强雪崩能力;

ONSEMI

安森美半导体

1200V NPT Trench IGBT

ONSEMI

安森美半导体

1200V NPT Trench IGBT

文件:2.55241 Mbytes Page:10 Pages

FAIRCHILD

仙童半导体

1200V NPT Trench IGBT

文件:938.21 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

1200V NPT Trench IGBT

文件:938.21 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

1200V NPT Trench IGBT

文件:2.55241 Mbytes Page:10 Pages

FAIRCHILD

仙童半导体

1200V NPT Trench IGBT

文件:938.21 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

1200 V, 15 A NPT Trench IGBT

文件:907.45 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:IGBT 1200V 30A 186W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

NPT Trench Technology, Positive temperature coefficient

文件:938.21 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Extremely enhanced avalanche capability

文件:938.21 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:IGBT 1200V 30A 186W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

1200V, 15A Field Stop Trench IGBT

ONSEMI

安森美半导体

1200V, 15A Field Stop Trench IGBT

文件:738.91 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters w

FAIRCHILD

仙童半导体

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 40 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable beha

INFINEON

英飞凌

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 40 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable beha

INFINEON

英飞凌

FGA15N120产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • V(BR)CES Typ (V):

    1200

  • VF Typ (V):

    1.7

  • Eoff Typ (mJ):

    0.6

  • Eon Typ (mJ):

    3

  • Irr Typ (A):

    27

  • Gate Charge Typ (nC):

    120

  • PD Max (W):

    186

  • Package Type:

    TO-3P-3L

更新时间:2026-7-22 18:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ON/安森美
NA
29700
原装现货支持BOM配单服务
ON/安森美
26+
TO-3P
30000
原装正品公司现货,假一赔十!
ON(安森美)
26+
NA
60000
只有原装 可配单
ON(安森美)
26+
NA
8000
原装现货 极速发货 一站式原装元器件BOM配单
ONSEMI/安森美
2009
明嘉莱只做原装正品现货
2510000
TO-3P
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
ON/安森美
21+
TO-3P
8080
只做原装,质量保证

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