FGA15N120价格
参考价格:¥12.2245
型号:FGA15N120ANTDTU_F109 品牌:Fairchild 备注:这里有FGA15N120多少钱,2026年最近7天走势,今日出价,今日竞价,FGA15N120批发/采购报价,FGA15N120行情走势销售排行榜,FGA15N120报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:FGA15N120ANTDTU;1200 V, 15 A NPT Trench IGBT 文件:907.45 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
High speed switching General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features | FAIRCHILD 仙童半导体 | |||
IGBT General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features | FAIRCHILD 仙童半导体 | |||
High speed switching General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features | FAIRCHILD 仙童半导体 | |||
1200V NPT Trench IGBT Description Using Fairchilds proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as i | FAIRCHILD 仙童半导体 | |||
IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC=15A · Extremely Enhanced Avalanche Capability · Positive Temperature Coefficient APPLICATIONS · Resonant or Soft Switching Application | ISC 无锡固电 | |||
IGBT,1200V,15A,NPT 沟槽 采用飞兆专有的沟道设计和先进NPT技术,此1200V NPT IGBT提供出色的导通和开关性能、高雪崩耐用性,易于并行运行。该设备非常适合谐振或软开关应用,例如感应加热、微波炉等。 •NPT 沟道技术,正温度系数\n•低饱和电压:VCE(sat)(典型值) = 1.9V@ IC = 15A 且 TC = 25°C\n•低开关损耗:EOFF(典型值) = 0.6mJ(IC = 15A 且 TC = 25°C时)\n•极度增强雪崩能力; | ONSEMI 安森美半导体 | |||
1200V NPT Trench IGBT | ONSEMI 安森美半导体 | |||
1200V NPT Trench IGBT 文件:2.55241 Mbytes Page:10 Pages | FAIRCHILD 仙童半导体 | |||
1200V NPT Trench IGBT 文件:938.21 Kbytes Page:10 Pages | FAIRCHILD 仙童半导体 | |||
1200V NPT Trench IGBT 文件:938.21 Kbytes Page:10 Pages | FAIRCHILD 仙童半导体 | |||
1200V NPT Trench IGBT 文件:2.55241 Mbytes Page:10 Pages | FAIRCHILD 仙童半导体 | |||
1200V NPT Trench IGBT 文件:938.21 Kbytes Page:10 Pages | FAIRCHILD 仙童半导体 | |||
1200 V, 15 A NPT Trench IGBT 文件:907.45 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:IGBT 1200V 30A 186W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | |||
NPT Trench Technology, Positive temperature coefficient 文件:938.21 Kbytes Page:10 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Extremely enhanced avalanche capability 文件:938.21 Kbytes Page:10 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:IGBT 1200V 30A 186W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | |||
1200V, 15A Field Stop Trench IGBT | ONSEMI 安森美半导体 | |||
1200V, 15A Field Stop Trench IGBT 文件:738.91 Kbytes Page:9 Pages | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters w | FAIRCHILD 仙童半导体 | |||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 40 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable beha | INFINEON 英飞凌 | |||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 40 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable beha | INFINEON 英飞凌 |
FGA15N120产品属性
- 类型
描述
- Pb-free:
Pb
- Status:
Active
- V(BR)CES Typ (V):
1200
- VF Typ (V):
1.7
- Eoff Typ (mJ):
0.6
- Eon Typ (mJ):
3
- Irr Typ (A):
27
- Gate Charge Typ (nC):
120
- PD Max (W):
186
- Package Type:
TO-3P-3L
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
ON/安森美 |
NA |
29700 |
原装现货支持BOM配单服务 |
||||
ON/安森美 |
26+ |
TO-3P |
30000 |
原装正品公司现货,假一赔十! |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON(安森美) |
26+ |
NA |
8000 |
原装现货 极速发货 一站式原装元器件BOM配单 |
|||
ONSEMI/安森美 |
2009 |
明嘉莱只做原装正品现货 |
2510000 |
TO-3P |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON/安森美 |
21+ |
TO-3P |
8080 |
只做原装,质量保证 |
FGA15N120规格书下载地址
FGA15N120参数引脚图相关
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- g508
- g500
- g221
- fx57
- FTTH
- fr107
- fpga开发板
- FPC连接器
- fp6290
- foxconn
- fml22s
- flotherm
- finder继电器
- FGF506R
- FGF506D
- FGF4007
- FGF4006
- FGF4005
- FGF4004
- FGF4003
- FGF4002
- FGF4001
- FGF2007
- FGF2006
- FGF2005
- FGF2004
- FGF2003
- FGF2002
- FGF2001
- FGF1B
- FGD4536
- FGD2N40
- FGB3236
- FGA50S110P
- FGA50N100BNTDTU
- FGA50N100BNTD2
- FGA40T65SHDF
- FGA40T65SHD
- FGA40N65SMD
- FGA30T65SHD
- FGA30S120P
- FGA30N65SMD
- FGA30N60LSDTU
- FGA30N120FTDTU
- FGA25S125P
- FGA25N120ANTDTU_F109
- FGA25N120ANTDTU
- FGA20S140P
- FGA20S125P
- FGA20N120FTDTU
- FGA180N33ATDTU
- FGA15S125P
- FGA15N120ANTDTU_F109
- FGA.3B.330.CYCD12
- FGA.3B.320.CYCD10
- FGA.2B.319.CYCD99
- FGA.2B.304.CLAD92
- FGA.1B.314.CYCD72Z
- FGA.1B.314.CYCD62Z
- FGA.1B.308.CLAD72Z
- FGA.1B.308.CLAD52Z
- FGA.1B.306.CLAD62Z
- FGA.1B.303.CLAD52
- FGA.1B.302.CLAD52
- FGA.1B.302.CLAD42
- FGA.0B.309.CLAD56
- FGA.0B.307.CYCD42Z
- FGA.0B.307.CLAD52
- FGA.0B.307.CLAD31Z
- FGA.0B.306.CLAD42Z
- FGA.0B.306.CLAD31
- FGA.0B.305.CYCD52Z
- FGA.0B.305.CLAD52Z
- FG9366
- FG9360
- FG9286
- FG9283
- FG9026
- FG9023
- FG8966
- FG8963
- FG8960
- FG896
- FG8693
- FG8246
- FG8243
- FG8240
- FG821
- FG8066
- FG8063
- FG8060
- FG801F
- FG801
FGA15N120数据表相关新闻
FG28X7R1H104KNT06
多層陶瓷電容器MLCC - 引線電容器 RAD 50V 0.1uF X7R 10% LS:5mm
2023-12-28FGA40T65SHD
FGA40T65SHD
2023-8-22FG-23629-D65
FG-23629-D65
2023-3-24FG-23329-D65
FG-23329-D65
2023-3-24FGA60N65SMD原装正品 假一赔十
焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!
2021-1-14FGA60N65SMD
650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管
2020-6-29
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110