SiC Diode, 1200V, 40A, TO-247-3, Common Cathode

封装/外壳：TO-247-3 包装：散装 描述：1200V 40A AUTO SIC SBD 分立半导体产品 二极管 - 整流器 - 单

SiC，双裸片，1200 V，40 A

Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode

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封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 1200V TO247 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D1, TO-247-3L

120 W, RF Power GaN HEMT

Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an

120 W, RF Power GaN HEMT

Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

120 W, RF Power GaN HEMT

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120 W, RF Power GaN HEMT

文件：1.21044 Mbytes Page：13 Pages

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes Page：13 Pages