位置：首页 > IC中文资料 > FFSH20120A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FFSH20120A | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil | ONSEMI 安森美半导体 |   | |
FFSH20120A | 封装/外壳：TO-247-2 包装：管件 描述：DIODE SCHOTTKY 1.2KV 30A TO247-2 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
FFSH20120A | 碳化硅肖基特二极管 | ONSEMI 安森美半导体 | | |
FFSH20120A | Silicon Carbide Schottky Diode 文件：683.57 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil | ONSEMI 安森美半导体 | | ||
Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil | ONSEMI 安森美半导体 | | ||
Silicon Carbide Schottky Diode 文件：336.38 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SiC，双裸片，1200 V，20 A | ONSEMI 安森美半导体 | | ||
Silicon Carbide Schottky Diode 文件：310 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-3L | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SIC 1200V 10A TO247 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | ||
Silicon Carbide Schottky Diode 文件：432.79 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
1200 V αSiC Silicon Carbide Schottky Barrier Diode Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr | AOSMD 万国半导体 | | ||
LOW VF SCHOTTKY RECTIFIER 文件：52.63 Kbytes Page：2 Pages | PANJIT 強茂 | | ||
LOW VF SCHOTTKY RECTIFIER 文件：71.1 Kbytes Page：4 Pages | PANJIT 強茂 | | ||
Ultra low forward voltage drop, low power loss 文件：98.01 Kbytes Page：4 Pages | PANJIT 強茂 | | ||
Ultra low forward voltage drop, low power loss 文件：67.95 Kbytes Page：4 Pages | PANJIT 強茂 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
13648 |
全新原装正品/价格优惠/质量保障 |
|||
ON/安森美 |
24+ |
NA/ |
8300 |
原装现货,当天可交货,原型号开票 |
|||
ON/安森美 |
22+ |
TO-247 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
25+ |
TO-247 |
21 |
原装正品,假一罚十! |
|||
ONSEMI/安森美 |
24+ |
TO247 |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILDONSEMICONDUCTOR |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ONSEMI/安森美 |
25+ |
TO-247 |
32360 |
ONSEMI/安森美全新特价FFSH20120ADN-F155即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ONS |
24+ |
TO-247 |
8000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ONN |
2526+ |
原厂封装 |
411 |
只做原装优势现货库存 渠道可追溯 |
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FFSH20120A规格书下载地址
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FFSH20120A数据表相关新闻
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1200 V碳化硅（SiC）二极管 安森美半导体二极管的优势包括更快的工作频率，更高的功率密度和更低的EMI
2020-4-8
DdatasheetPDF页码索引
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