| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FFSB0865B | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8A, 650 V, D2, D2PAK-2L Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide | ONSEMI 安森美半导体 |   | |
FFSB0865B | Silicon Carbide Schottky Diode 文件：382.1 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
FFSB0865B | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：650V 8A SIC SBD GEN1.5 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
FFSB0865B | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8A, 650 V, D2, D2PAK-2L Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide | ONSEMI 安森美半导体 | | ||
Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide | ONSEMI 安森美半导体 | | ||
Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide | ONSEMI 安森美半导体 | | ||
Silicon Carbide Schottky Diode 文件：382.43 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：650V 8A SIC SBD GEN1.5 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
Silicon Carbide Schottky Diode 文件：316.01 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Excellent high frequency performance 文件：1.15836 Mbytes Page：4 Pages | TTELEC | | ||
Ceramic Ball Grid Termination Arrays 文件：1.17579 Mbytes Page：4 Pages | TTELEC | | ||
Ceramic Ball Grid Termination Arrays 文件：1.17579 Mbytes Page：4 Pages | TTELEC | | ||
Excellent high frequency performance 文件：1.15836 Mbytes Page：4 Pages | TTELEC | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
25+ |
30000 |
原装现货,支持实单 |
||||
ON/安森美 |
23+ |
TO263-2 |
50000 |
全新原装正品现货,支持订货 |
|||
ON/安森美 |
25+ |
TO263-2 |
1022 |
原装正品,假一罚十! |
|||
FAIRCHILDONSEMICONDUCTOR |
1845 |
30 |
原装现货支持BOM配单服务 |
||||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ON/安森美 |
24+ |
TO263-2 |
60000 |
全新原装现货 |
|||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271581邹小姐 |
FFSB0865B芯片相关品牌
FFSB0865B规格书下载地址
FFSB0865B参数引脚图相关
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FFSB0865B数据表相关新闻
FFSH10120A-F155碳化硅（SiC）二极管
FFSH10120A-F155碳化硅（SiC）二极管
2024-1-5FFC3B07-30-T
优势渠道
2023-9-18FG-23329-D65
FG-23329-D65
2023-3-24FFSB10120A-F085
1200 V碳化硅（SiC）二极管 安森美半导体二极管的优势包括更快的工作频率，更高的功率密度和更低的EMI
2020-4-8FFB0824VHE
FFB0824VHE，全新原装当天发货或门市自取0755-82732291.
2020-1-13FFB0824SHE
FFB0824SHE，全新原装当天发货或门市自取0755-82732291.
2020-1-13
DdatasheetPDF页码索引
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