FFP08S60SN价格
参考价格：￥2.5312
型号：FFP08S60SNTU 品牌：Fairchild Semiconductor 备注：这里有FFP08S60SN多少钱，2026年最近7天走势，今日出价，今日竞价，FFP08S60SN批发/采购报价，FFP08S60SN行情走势销售排行榜，FFP08S60SN报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FFP08S60SN | 8A, 600V STEALTHTM II Rectifier 8A, 600V STEALTHTM II Rectifier The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power sw | FAIRCHILD 仙童半导体 |   | |
FFP08S60SN | 8A，600V，STEALTH™ II 二极管 FFP08S60SN 是代软恢复特性的 STEALTH™ II 代二极管。它采用氮化硅钝化的离子布植式外延平面结构。此器件在开关电源及其他电源开关应用中用作续流或升压二极管。其低存储电荷和超高速软恢复特性可最大程度降低多种电源开关电路中的振铃和电气噪声，由此降低开关晶体管中的功耗。 •Stealth 恢复，Trr = 25 ns（需 IF= 8 A）\n•最大正向电压，VF = 3.4 V（需 TC = 25°C）\n•600 V 反向电压和高可靠性\n•提高了dv/dt处理能力\n•符合RoHS标准; | ONSEMI 安森美半导体 | | |
8A, 600V STEALTHTM II Rectifier 8A, 600V STEALTHTM II Rectifier The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power sw | FAIRCHILD 仙童半导体 | | ||
封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE GEN PURP 600V 8A TO220-2L 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
Stealth 2 Rectifier The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low | FAIRCHILD 仙童半导体 | | ||
Stealth 2 Rectifier The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low | FAIRCHILD 仙童半导体 | | ||
2nd generation thinQ SiC Schottky Diode FEATURES: • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switchin behavior • No forward recovery • High surge current capability Applications: • SMPS, PFC, snubber | INFINEON 英飞凌 | | ||
2nd Generation thinQ SiC Schottky Diode 文件：231.52 Kbytes Page：7 Pages | INFINEON 英飞凌 | | ||
Thinq SiC Schottky Diode 文件：207.21 Kbytes Page：8 Pages | INFINEON 英飞凌 | |
FFP08S60SN产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Type：
Single
- IO(rec) Max (A)：
8
- trr Max (ns)：
25
- VRRM Max (V)：
600
- VFM Max (V)：
3.4
- IFSM Max (A)：
60
- IR Max (mA)：
0.1
- Package Type：
TO-220-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
34 |
220 |
FAIRCHILD/仙童 |
10 |
92 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
FAIRCHILD/仙童 |
TO220 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
FAIRCHILD/仙童 |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
onsemi(安森美) |
25+ |
TO-220-2L |
12369 |
样件支持,可原厂排单订货! |
|||
FAIRCHILD/仙童 |
25+ |
TO220 |
880000 |
明嘉莱只做原装正品现货 |
|||
Fairchi |
24+ |
TO22 |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
FAIRCHILD |
25+23+ |
TO220 |
10000 |
绝对原装正品全新进口深圳现货 |
|||
Fairchild |
24+ |
TO-220-2 |
80 |
FFP08S60SN规格书下载地址
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