DualP-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel–1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–6A,–12V.RDS(ON)=18mΩ@VGS=–4.5VRDS(ON)=22mΩ@VGS=–2.5VRDS(ON)=30mΩ@VGS=–1.

DualP-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel–1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–6A,–12V.RDS(ON)=18mΩ@VGS=–4.5VRDS(ON)=22mΩ@VGS=–2.5VRDS(ON)=30mΩ@VGS=–1.

FDW2508PBDualP-Channel-1.8VSpecifiedPowerTrenchMOSFET-12V,-6A,18mohm

GeneralDescription ThisP-Channel–1.8VspecifiedMOSFETusesFairchildSemiconductor’sadvancedlowvoltagePowerTrench®.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ■MaxrDS(on)=18mΩatVGS=–4.5V,ID=–6A ■MaxrDS(on)=22mΩatVGS=–2.5V,ID=–5A ■M

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION Enhancedperformance,newgeneration,high-voltage,high-speedswitchingnpntransistorwithanintegrateddamperdiodeinaplasticfull-packenvelopeintendedforuseinhorizontaldeflectioncircuitsofcolourtelevisionreceivers.Featuresexceptionaltolerancetobasedri

AVALANCHEBRIDGERECTIFIERS

FEATURES: *Highcasedielectricstrength *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *ldealforprintedcircuitboard

LowpassFilter

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CAPTIVEPANELSCREWS

文件：395.93 Kbytes Page：1 Pages

SiliconDiffusedPowerTransistor

文件：71.46 Kbytes Page：7 Pages