General Description

This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.8 V

• Low gate charge(26nC typical)

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• Power management

• Load switch

• Battery protection