General Description

This P-Channel –1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications.

Features

■ Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A

■ Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A

■ Max rDS(on) = 30mΩ at VGS = –1.8V, ID = –4A

■ Low gate charge

■ High performance trench technology for extremely low rDS(on)

■ Low profile TSSOP-8 package

■ RoHS compliant

Application

■ Power management

■ Load switch

■ Battery protection