Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Features • 6.5 A, 20 V. RDS(ON)= 0.030 Ω@ VGS= 4.5 V

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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双 N 沟道，2.5V 指定，PowerTrench™ MOSFET，20V，6.5A，30mΩ

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Dual N-Channel 20-V (D-S) MOSFET

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Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

Dual N-Channel 20-V (D-S) MOSFET

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6A竊?0V Dual N-CHANNEL MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

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