P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

-30V P-Channel MOSFET

Features Low gate charge (17nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = - 30V ID = -8.8 A R DS(ON)

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -30A RDS(ON)

30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V –25V). Features · –40A, –30 V. RDS(ON)= 20

10/100 Base-T Single Port

文件：387.34 Kbytes Page：1 Pages

AND gate

文件：72.83 Kbytes Page：1 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.02648 Mbytes Page：9 Pages