General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V

• Extended VGSS range (±25V) for battery applications.

• Low gate charge (19nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability.

Applications

• Battery protection

• Load switch

• Motor drives