General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V –25V).

Features

· –40A, –30 V. RDS(ON)= 20 mW@ VGS= –10 V

RDS(ON)= 30 mW@ VGS= –4.5 V

· Fast switching speed

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability