Single N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS =

丝印代码：FDS6680；30V N-Channel MOSFET

Features • Ultra-low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability (VGS = 10V) VDS (V) =30V ID = 12 A RDS(ON)

单 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，12.5A，9.5mΩ

该N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •12.5 A，30 V\n•RDS(ON) = 9.5 mΩ @ VGS = 10 V\n•RDS(ON) = 13 mΩ @ VGS = 4.5 V\n•超低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力;

Single N-Channel, Logic Level, PowerTrench짰 MOSFET

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N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 10 A RDS(ON)

N 沟道 PowerTrench® SyncFET™，30V，11.5A，10.0mΩ

FDS6680AS设计用于替代同步DC:DC电源中的一个单SO-8 MOSFET和肖特基二极管。 此30V MOSFET设计用于最大限度地提高功率转换效率，提供低RDS(ON)和低栅极电荷。 FDS6680AS包含使用飞兆半导体单片SyncFET技术的集成肖特基二极管。 FDS6680AS在同步整流器中作为低端开关的性能与FDS6680并联一个肖特基二极管的性能相似。 •11.5A, 30V\n•RDS(ON) = 8.0 mΩ @ VGS = 10V\n•RDS(ON) = 10.5 mΩ @ VGS = 4.5V\n•包含SyncFET肖特基体二极管\n•低栅极电荷（22nC典型值）\n•高性能沟道技术可实现极低的RDS(ON)和快速开关\n•高功率和高电流处理能力;

30V N-Channel PowerTrench SyncFET

General Description The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky dio

30V N-Channel PowerTrench SyncFET

General Description The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky dio

Single N-Channel, Logic Level, PowerTrench짰 MOSFET

文件：202.11 Kbytes Page：5 Pages

30V N-Channel PowerTrench SyncFET

文件：1.01191 Mbytes Page：8 Pages

30V N-Channel PowerTrench SyncFET

文件：1.01191 Mbytes Page：8 Pages

N-Channel Logic Level PWM Optimized PowerTrench??MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ V

0.560-INCH SEVEN SEGMENT DISPLAYS

High Efficiency Buck/Boost Charge Pump Regulator

DESCRIPTION The SP6680 is a charge pump ideal for converting a +3.6V Li-Ion battery input to a +5.0V regulated output. An input voltage range of +2.7V to +6.3V is converted to a regulated output of 5.8V. The SP6680 device will operate at three different switching frequencies corresponding to thre

High Efficiency Buck/Boost Charge Pump Regulator

DESCRIPTION The SP6680 is a charge pump ideal for converting a +3.6V Li-Ion battery input to a +5.0V regulated output. An input voltage range of +2.7V to +6.3V is converted to a regulated output of 5.8V. The SP6680 device will operate at three different switching frequencies corresponding to thre

0.560-INCH SEVEN SEGMENT DISPLAYS

文件：527.76 Kbytes Page：5 Pages