Single N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS =

30V N-Channel MOSFET

Features • Ultra-low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability (VGS = 10V) VDS (V) =30V ID = 12 A RDS(ON)

Single N-Channel, Logic Level, PowerTrench짰 MOSFET

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N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 10 A RDS(ON)

30V N-Channel PowerTrench SyncFET

General Description The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky dio

30V N-Channel PowerTrench SyncFET

General Description The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky dio

Single N-Channel, Logic Level, PowerTrench짰 MOSFET

文件：202.11 Kbytes Page：5 Pages

30V N-Channel PowerTrench SyncFET

文件：1.01191 Mbytes Page：8 Pages

30V N-Channel PowerTrench SyncFET

文件：1.01191 Mbytes Page：8 Pages

AND gate

文件：87.94 Kbytes Page：1 Pages

6680A Series Single-Output, 5000 W DC Power Supplies, GPIB

文件：1.30168 Mbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：202.16 Kbytes Page：5 Pages

Lower Gate Charge, Simple Drive Requirement

文件：99.03 Kbytes Page：4 Pages

Simple Drive Requirement

文件：74.56 Kbytes Page：6 Pages