N-Channel Logic Level PWM Optimized PowerTrench??MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ V

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=46A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

30V N-Channel PowerTrench MOSFET

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N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=56A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

30V N -Channel MOSFET

Features • Includes SyncFET Schottky body diode • Low gate charge (21nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • VDS(V) = 30V • ID =50A (VGS = 10V) • RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

30V N-Channel PowerTrench SyncFET?

General Description The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode usin

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

30V N-Channel PowerTrench짰 SyncFET?

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30V N-Channel PowerTrench짰 SyncFET?

文件：332.08 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01911 Mbytes Page：8 Pages

AND gate

文件：87.94 Kbytes Page：1 Pages

6680A Series Single-Output, 5000 W DC Power Supplies, GPIB

文件：1.30168 Mbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：202.16 Kbytes Page：5 Pages

Lower Gate Charge, Simple Drive Requirement

文件：99.03 Kbytes Page：4 Pages

Simple Drive Requirement

文件：74.56 Kbytes Page：6 Pages