N-Channel Logic Level PWM Optimized PowerTrench??MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ V

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=46A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

30V N-Channel PowerTrench MOSFET

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N-Channel Logic Level PWM Optimized PowerTrench™ MOSFET

丝印代码：FDD6680AS；30V N -Channel MOSFET

Features • Includes SyncFET Schottky body diode • Low gate charge (21nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • VDS(V) = 30V • ID =50A (VGS = 10V) • RDS(ON)

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=56A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N 沟道，PowerTrench® SyncFET™ MOSFET，30V，55A，10.5mΩ

FDD6680AS设计用于替代同步DC/DC电源中的单一MOSFET和肖特基二极管。 此30V MOSFET设计用于最大限度地提高功率转换效率，提供低RDS(ON)和低栅极电荷。 FDD6680AS包含使用飞兆半导体单片SyncFET技术的集成肖特基二极管。 FDD6680AS在同步整流器中作为低端开关的性能与FDD6680A并联一个肖特基二极管的性能相似。 •55A，30V\n•RDS(ON) = 10.5 mΩ @ VGS = 10 V\n•RDS(ON) = 13.0 mΩ @ VGS = 4.5 V\n•包含SyncFET肖特基体二极管\n•低栅极电荷（典型值21 nC）。\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

30V N-Channel PowerTrench SyncFET?

General Description The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode usin

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N-Channel, Logic Level, PowerTrench MOSFET

30V N-Channel PowerTrench짰 SyncFET?

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30V N-Channel PowerTrench짰 SyncFET?

文件：332.08 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

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0.560-INCH SEVEN SEGMENT DISPLAYS

High Efficiency Buck/Boost Charge Pump Regulator

DESCRIPTION The SP6680 is a charge pump ideal for converting a +3.6V Li-Ion battery input to a +5.0V regulated output. An input voltage range of +2.7V to +6.3V is converted to a regulated output of 5.8V. The SP6680 device will operate at three different switching frequencies corresponding to thre

High Efficiency Buck/Boost Charge Pump Regulator

DESCRIPTION The SP6680 is a charge pump ideal for converting a +3.6V Li-Ion battery input to a +5.0V regulated output. An input voltage range of +2.7V to +6.3V is converted to a regulated output of 5.8V. The SP6680 device will operate at three different switching frequencies corresponding to thre

0.560-INCH SEVEN SEGMENT DISPLAYS

文件：527.76 Kbytes Page：5 Pages