General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V

RDS(ON) = 13 mΩ @ VGS = 4.5 V

• Ultra-low gate charge

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability