30 Volt P-Channel PowerTrench MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O

P 沟道，PowerTrench® MOSFET，30V，-13A，9mΩ

该P沟道MOSFET特别为提高DC/DC转换器的整体效率而设计，采用同步或传统开关脉宽调制(PWM)控制器及电池充电器。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。 •-13 A, -30 V.\n•RDS(ON) = 9 m Ω （VGS = -10 V 时）\n•RDS(ON) = 13 mΩ （VGS = -4.5 V 时）\n•为电池应用设计的扩展VGSS范围(±25V)\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

30 Volt P-Channel PowerTrench짰 MOSFET

文件：98.18 Kbytes Page：4 Pages

丝印代码：FDS6679AZ；P-Channel 30 V (D-S) MOSFET

APPLICATIONS • Load Switch • Notebook Adaptor Switch

P-Channel PowerTrench MOSFET -30V, -13A, 9mOhm

General Description This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

P 沟道，PowerTrench® MOSFET，-30V，-13A，9mΩ

此P沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗而定制的。该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。 •VGS = -10V，ID = -13A时，rDS(on) = 9.3 mΩ（最大值）\n•VGS = -4.5V，ID = -11A时，rDS(on) = 14.8 mΩ（最大值）\n•扩展了VGS范围(-25V)，适合电池应用\n•HBM静电放电保护等级，典型值为6KV（注3）\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n•高功率和高电流处理能力;

丝印代码：6679；P-Channel Enhancement Mode MOSFET

FEATURES -30V/-15A Rosion) =6-8MQ(Max.) @ Vg =-10V Roson =13MQ(Max) @ V,, =-4.5V

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -12A RDS(ON)

30 Volt P-Channel PowerTrench MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O

30 Volt P-Channel PowerTrench짰 MOSFET

文件：98.18 Kbytes Page：4 Pages

P-Channel PowerTrench짰 MOSFET

文件：434.54 Kbytes Page：6 Pages

P-Channel PowerTrench짰 MOSFET

文件：434.54 Kbytes Page：6 Pages

P-Channel 30-V (D-S) MOSFET

文件：995.81 Kbytes Page：9 Pages

Direct Conversion FSK Data Receiver

Direct Conversion FSK Data Receiver The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all functions to convert a binary FSK modulated RF signal into a demodulated data stream. Adjacent channel rejection is provided using tuneable gyr

128-common x 132-segment BIT MAP LCD DRIVER

文件：598.5 Kbytes Page：46 Pages

128-common x 132-segment BIT MAP LCD DRIVER

文件：598.5 Kbytes Page：46 Pages