位置：首页 > IC中文资料第893页 > FDS6679Z
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDS6679Z | 30 Volt P-Channel PowerTrench MOSFET This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼ Lower On-resistance ▼ Simple Driv | A-POWER 富鼎先进电子 | | ||
P-Channel 30-V (D-S) MOSFET 文件：998.82 Kbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30-V (D-S) MOSFET 文件：991.33 Kbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30-V (D-S) MOSFET 文件：991.29 Kbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.02315 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
FDS6679Z产品属性
- 类型
描述
- 型号
FDS6679Z
- 功能描述
MOSFET SO-8
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOP-8 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
原厂原装 |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRCHILD |
23+ |
NA |
989 |
专做原装正品,假一罚百! |
|||
FAIRCHILD |
06+/10+ |
SOP8 |
1 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
20+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
|||
P-CH |
24+ |
ON |
26970 |
郑重承诺只做原装进口现货 |
|||
FAIRCHILD |
25+ |
SOP8 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
FDS |
22+ |
SOP8 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
1709+ |
SOP8 |
79999 |
优势 |
|||
FAIRCHILD |
24+ |
SOP |
50000 |
只做原装正品现货 欢迎来电查询15919825718 |
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DdatasheetPDF页码索引
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