General Description

This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A

■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A

■ Extended VGS range (-25V) for battery applications

■ HBM ESD protection level of 6kV typical (note 3)

■ High performance trench technology for extremely low rDS(on)

■ High power and current handing capability

■ RoHS Compliant