丝印代码：FDS4435；30V P-Channel PowerTrenchÒ MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mW @ VGS

P-Channel Logic Level PowerTrench?줞OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =

-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

30V P-Channel PowerTrench MOSFET

文件：65.65 Kbytes Page：5 Pages

丝印代码：FDS4435BZ；P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

丝印代码：FDS4435BZ；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

丝印代码：FDS4435BZ；P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m

文件：416.89 Kbytes Page：7 Pages

P-Channel Logic Level PowerTrench?줞OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =

30 Volt P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

P 沟道，PowerTrench® MOSFET，-30V，-8.8A，20mΩ

此P沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大程度地降低通态电阻而定制的。• 该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。 •最大rDS(on) = 20mΩ（VGS = –10V且ID = –8.8A时）\n•最大rDS(on) = 35mΩ（VGS = –4.5V且ID = –6.7A时）\n•扩展了VGSS范围(-25V)，适合电池应用\n•HBM ESD保护等级为±3.8KV典型值（注3）\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力\n•终端是符合RoHS标准的无铅产品;

P-Channel PowerTrench® MOSFET

General Description\nThis P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.\nThis device is well suited for Power Management and load switching applications common in Notebook Computers an ■ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A\n■ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A\n■ Extended VGSS range (-25V) for battery applications\n■ HBM ESD protection level of ±3.8KV typical (note 3)\n■ High performance trench technology for extremely low rDS(on)\n■ High power and current hand;

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

P 沟道 PowerTrench® MOSFET -30V，-8.8A，20mΩ

此 P 沟道 MOSFET 采用飞兆先进的 Power Trench® 工艺生产，这一先进工艺是专为最大限度地降低导通电阻而定制的。 该器件非常适合笔记本电脑和便携电池组中的电源管理和负载开关应用。 •最大 rDS(on)= 20 mΩ （VGS = -10 V、ID= -8.8 A）\n•VGS = -4.5V且ID = -6.7A时，最大rDS(on) = 35mΩ \n•扩展了VGSS范围(-25V)，适合电池应用\n•HBM ESD保护等级为±3.8KV典型值（注3）\n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力\n•终端是符合 RoHS 标准的无铅产品\n•符合 AEC Q101;

30V P-Channel PowerTrench MOSFET

文件：65.65 Kbytes Page：5 Pages

P-Channel Logic Level PowerTrench MOSFET

文件：172.6 Kbytes Page：5 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.00476 Mbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.00471 Mbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：579.62 Kbytes Page：9 Pages

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

ARX4435N Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435N and ARX4435NFP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The ARX4435N and ARX4435NFP perform the front-end analog function of inputting and outputting data

ARX4435N Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435N and ARX4435NFP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The ARX4435N and ARX4435NFP perform the front-end analog function of inputting and outputting data