FDS4435BZ价格

参考价格:¥1.3057

型号:FDS4435BZ 品牌:Fairchild 备注:这里有FDS4435BZ多少钱,2025年最近7天走势,今日出价,今日竞价,FDS4435BZ批发/采购报价,FDS4435BZ行情走势销售排行榜,FDS4435BZ报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FDS4435BZ

30 Volt P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

Fairchild

仙童半导体

FDS4435BZ

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

Fairchild

仙童半导体

FDS4435BZ

-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

EVVOSEMI

翊欧

FDS4435BZ

P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features  Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A  Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A  Extended VGSS range (-25V) for battery applications  HBM ESD protection level of ±3.8KV typical (note 3)  High performance trench technology for extremely low rDS(on)  High power and

ONSEMI

安森美半导体

FDS4435BZ

P 沟道,PowerTrench® MOSFET,-30V,-8.8A,20mΩ

ONSEMI

安森美半导体

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

Fairchild

仙童半导体

P-Channel PowerTrench® MOSFET

ONSEMI

安森美半导体

P 沟道 PowerTrench® MOSFET -30V,-8.8A,20mΩ

ONSEMI

安森美半导体

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m

文件:416.89 Kbytes Page:7 Pages

ONSEMI

安森美半导体

P-Channel 30-V (D-S) MOSFET

文件:1.00471 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Power MOSFET

Description The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

AEROFLEX

P-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • VDS=-30V,ID=-8A • RDS(on) (m-ohm) 0.020 @ VGS = - 10V ,ID= -8A 0.030 @ VGS = -4.5V,ID= -5A APPLICATIONS • Load Switches • B

HOTTECH

合科泰

DELAY MODULES,TTL,SURFACE MOUNTED

文件:137.17 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel 30-V (D-S) MOSFET

文件:1.00935 Mbytes Page:9 Pages

VBSEMI

微碧半导体

FDS4435BZ产品属性

  • 类型

    描述

  • 型号

    FDS4435BZ

  • 功能描述

    MOSFET 30V.PCH POWER TRENCH MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
100000
代理渠道/只做原装/可含税
FAICHILD
24+
SOP8
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
70
8
FAIRCHILD/仙童
13
92
FAIRCHILD
24+
SOP-8
665000
一级代理/全新现货/长期供应!
ONSEMI
25+
SMD
518000
明嘉莱只做原装正品现货
ON(安森美)
24+
N/A
14988
原厂可订货,技术支持,直接渠道。可签保供合同
FAIRCHILD/仙童
2038+
SOP8
8000
原装正品现货假一罚十
ON
25+
SOP8
6000
全新原装现货、诚信经营!
FAI
24+
SOP8PB
20000
ONSEMI
25+
NA
30000
全新原装!优势库存热卖中!

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