General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

• –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS = -10 V

RDS(ON) = 0.025 Ω @ VGS = -4.5 V

• Low gate charge (21nC typical)

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability